Electric field manipulation of nonvolatile magnetization in Au/NiO/Pt heterostructure with resistive switching effect

The electrical field manipulation of magnetization is investigated in an Au/NiO/Pt heterostructure, which is fully compatible with the standard complementary metal-oxide semiconductor process. Reversible and stable unipolar resistive switching effects as well as a significant nonvolatile change of the magnetization are observed in this device during the set and reset processes at room temperature. Further analysis indicates that the formation and rupture of metallic Ni conducting filaments caused by the electric field would be responsible for the changes of resistivity and magnetization. The coexistence of the electric field control of magnetization change and resistive switching makes Au/NiO/Pt heterostructure a promising candidate for the multifunctional memory devices. (c) 2014 AIP Publishing LLC.