期刊
APPLIED PHYSICS LETTERS
卷 105, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4897302
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资金
- National Science Council of Taiwan [NSC 101-2628-E-007-018-MY2]
- Taiwan Textile Research Institute
Effect of stress on lattice defect concentration and thermoelectric properties of Bi-Te based thin films is investigated. Both Bi-Sb-Te and Bi-Se-Te films were individually sputtered on a stretched polyimide (PI) substrate and annealed at elevated temperature. With the PI strain varying from 0% to 10%, the carrier concentration increases triple times for the Bi-Sb-Te films and decreases by 35% for the Bi-Se-Te films. The Seebeck coefficient and electrical resistivity are also found to vary monotonically with PI strain. A stress-mediated Te vacancy formation mechanism is proposed to explain the changes of thermoelectric properties of Bi-Te films on strained PI substrates. (C) 2014 AIP Publishing LLC.
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