期刊
APPLIED PHYSICS LETTERS
卷 104, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4883228
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资金
- INAC
- university Grenoble Alpes
- NSF [DMR-1207394]
- EC FP7 FET-proactive NanoICT under Project SiAM [610637]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1207394] Funding Source: National Science Foundation
The continuous downscaling of transistors results in nanoscale devices which require fewer and fewer charged carriers for their operation. The ultimate charge controlled device, the single-electron transistor (SET), controls the transfer of individual electrons. It is also the most sensitive electrometer, and as a result the electron transport through it can be dramatically affected by nearby charges. Standard direct-current characterization techniques, however, are often unable to unambiguously detect and resolve the origin of the observed changes in SET behavior arising from changes in the charge state of a capacitively coupled trap. Using a radio-frequency (RF) reflectometry technique, we are able to unequivocally detect this process, in very close agreement with modeling of the trap's occupation probability. (C) 2014 AIP Publishing LLC.
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