期刊
APPLIED PHYSICS LETTERS
卷 104, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4870067
关键词
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资金
- Grants-in-Aid for Scientific Research [23246116, 23310096, 24651148] Funding Source: KAKEN
Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS2 flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4(kB)T is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction. (C) 2014 AIP Publishing LLC.
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