期刊
APPLIED PHYSICS LETTERS
卷 105, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4903234
关键词
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资金
- Adaptable and Seamless Technology Transfer Program through Target-Driven R&D of Japan Science and Technology Agency
- Osaka Central Area Industry-Government-Academia Collaboration Project on the City Area Program from the Ministry of Education, Culture, Sports, Science and Technology of Japan
- Japan Society for the Promotion of Science [19GS1209, 24226009]
Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 degrees C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2m Omega cm. The fabricated LED up to 3mm square surface emitted red light when the on-voltage was exceeded. (C) 2014 AIP Publishing LLC.
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