期刊
APPLIED PHYSICS LETTERS
卷 104, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4878402
关键词
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资金
- National Basic Research Program of China [2012CB932702]
- National Science Foundation of China [11174031, 51371024, 51325101, 51271020]
- PCSIRT
- Beijing Nova program [2011031]
- Fundamental Research Funds for the Central Universities
The effect of oxide/oxide interface for controlling the migration process of oxygen vacancies (or oxygen ions) on resistive switching behaviors has been investigated by fabricating the ZrO2/ZnO oxide heterostructures. Completely different resistive switching behaviors are observed in the heterostructures with a set process under a different bias polarity. It is demonstrated that the change of the oxide/oxide interface barrier height determining the migration of oxygen vacancies (or oxygen ions) leads to the current direction-dependent resistive switching. Furthermore, the ZnO/ZrO2 heterostructure with the homogeneous resistive switching behavior could be potentially applied as a controllable and stable multistate memory by controlling reset-stop voltages. Our method opens up an opportunity to explore the resistive switching mechanism and develop resistance switching devices with specific functions through engineering oxide/oxide interfaces in oxide heterostructures. (C) 2014 AIP Publishing LLC.
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