期刊
APPLIED PHYSICS LETTERS
卷 105, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4901965
关键词
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资金
- LDRD at Sandia
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- U.S. Department of Energy, Office of Basic Energy Sciences user facility at Los Alamos National Laboratory [DE-AC52-06NA25396]
- Sandia National Laboratories [DE-AC04-94AL85000]
- United States Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the InAs-Ta junction depends largely on the interfacial transparency, exhibiting distinct zero-bias behavior. For a relatively resistive interface, a broad conductance peak is observed at zero bias. When a transparent InAs-Ta interface is achieved, a zero-bias conductance dip appears with two coherent-peak-like features forming at bias voltages corresponding to the superconducting gap of Ta. The conductance spectra of the transparent InAs-Ta junction at different gate voltages can be fit well using the standard Blonder-Tinkham-Klapwijk theory. (C) 2014 AIP Publishing LLC.
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