4H-SiC UV photo detectors with large area and very high specific detectivity

Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 cm(2). The I-V characteristics and photoresponse spectra have been measured and analyzed. For a 5 mm x 5 mm area device leakage current lower than 10(-15) A at zero bias and 1.2 x 10(-14) A at -1 V have been established. The quantum efficiency is over 30% from 240 to 320 nm. The specific detectivity, D*, has been calculated from the directly measured leakage current and quantum efficiency are shown to be higher than 10(15) cmHz(1/2)/W from 210 to 350 nm with a peak D* of 3.6 x 10(15) cmHz(1/2)/W at 300 nm.