期刊
SOLID STATE COMMUNICATIONS
卷 131, 期 12, 页码 739-744出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2004.07.030
关键词
transparent conducting oxides; electronic band structure; optical properties
We have studied the electronic structure of beta-Ga2O3 using the first principles full-potential linearized augmented plane wave method. It is found that beta-Ga2O3 has an indirect band gap with a conduction band minimum (CBM) at Gamma point and a valence band maximum on the E line. The anisotropic optical proper-Lies are explained by the selection rule of the band-to-band transitions. On the other hand, the shape of the CBM is almost isotropic and, therefore, the observed electronic anisotropy in the n-type semiconducting state should not be attributed to the properties of a perfect lattice. The Burstein-Moss shift is discussed using the effect of several allowed transitions between the levels of the valence band and the CBM. (C) 2004 Elsevier Ltd. All rights reserved.
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