期刊
APPLIED PHYSICS LETTERS
卷 104, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4869851
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资金
- Swiss National Science Foundation [200020_132724]
- EU [ERC-268058 MOBILE-W, 268058]
- STSM [COST-0904 ACTION]
- Swiss National Science Foundation through the NCCR MaNEP
- Swiss National Science Foundation (SNF) [200020_132724] Funding Source: Swiss National Science Foundation (SNF)
Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109 degrees domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive paths signal the original domain wall position. The conduction at such domain wall footprints is activated by domain movement and decays rapidly with time, but can be re-activated by opposite polarity voltage. The observed phenomena represent true leakage conduction rather than merely displacement currents. We propose a scenario of hopping transport in combination with thermionic injection over interfacial barriers controlled by the ferroelectric polarization. (C) 2014 AIP Publishing LLC.
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