期刊
APPLIED PHYSICS LETTERS
卷 105, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4896142
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资金
- Kakenhi [24102703, 24005629, 26709023, 26249048, 26630151]
- PRESTO program of the Japan Science and Technology Agency (JST)
- Yazaki Memorial Foundation for Science and Technology
- Project for Developing Innovation Systems of the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan
- Grants-in-Aid for Scientific Research [26249048, 24102703, 26709023, 26630151] Funding Source: KAKEN
Lithographically defined p-channel Si single hole transistors (SHTs) and double quantum dot (DQD) devices are fabricated and characterized. Coulomb oscillations are clearly evident at a temperature of 4.2 K. The charging energy and the diameter of the SHT are estimated from the Coulomb diamonds. Honeycomb-like charge stability diagrams are observed from measurements of the DQD devices. Single hole transitions through the DQD are detected using an integrated SHT as a charge sensor, and a few-hole regime of the DQD is observed. (C) 2014 AIP Publishing LLC.
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