期刊
APPLIED PHYSICS LETTERS
卷 105, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4895677
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资金
- Research Grants Council (RGC) theme-based research scheme (TRS) of the Hong Kong Special Administrative Region Government [T23-612/12-R]
We report the use of SiNx grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiNx/AlN interface exhibits remarkably low trap state densities in the range of 10(11)-10(12) cm(-2) eV(-1). Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiNx layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiNx as an effective gate dielectric for AlN/GaN MIS devices. (C) 2014 AIP Publishing LLC.
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