期刊
APPLIED PHYSICS LETTERS
卷 105, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4903874
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资金
- Industrial Strategic Technology Development Program - MOTIE/KEIT [10045269]
We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 degrees C increased the field effect mobility from 14.7 cm(2)/V s to 17.9 cm(2)/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO2. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm(-3) to 5.83 g cm(-3) (3.4% increase) by 100 h annealing at 250 degrees C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability. (C) 2014 AIP Publishing LLC.
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