相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors Exceeding Low-Temperature Poly-Si Transistor Performance
Jae Chul Park et al.
ACS APPLIED MATERIALS & INTERFACES (2013)
Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone
Morteza Fakhri et al.
ADVANCED MATERIALS (2013)
Compensating Pixel Circuit Driving AMOLED Display With a-IGZO TFTs
Chih-Lung Lin et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Water as Origin of Hysteresis in Zinc Tin Oxide Thin-Film Transistors
M. Fakhri et al.
ACS APPLIED MATERIALS & INTERFACES (2012)
Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
E. Fortunato et al.
ADVANCED MATERIALS (2012)
Top-gate amorphous IGZO thin-film transistors with a SiO buffer layer inserted between active channel layer and gate insulator
F. Zhou et al.
CURRENT APPLIED PHYSICS (2012)
Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc-Tin-Silicon-Oxide Barrier Layer
E. S. Sundholm et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Current Stress Induced Electrical Instability in Transparent Zinc Tin Oxide Thin-Film Transistors
Woo-Seok Cheong et al.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2012)
Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets
Mallory Mativenga et al.
SOLID STATE COMMUNICATIONS (2012)
Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors
Shinhyuk Yang et al.
APPLIED PHYSICS LETTERS (2011)
Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures
M. Fakhri et al.
APPLIED PHYSICS LETTERS (2011)
Electrical properties of top-gate oxide thin-film transistors with double-channel layers
Woo-Seok Cheong et al.
JOURNAL OF CRYSTAL GROWTH (2011)
Effect of oxygen on the threshold voltage of a-IGZO TFT
Eugene Chong et al.
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY (2011)
High-Performance Al-Sn-Zn-In-O Thin-Film Transistors: Impact of Passivation Layer on Device Stability
Shinhyuk Yang et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Present status of amorphous In-Ga-Zn-O thin-film transistors
Toshio Kamiya et al.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2010)
Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas-Diffusion Barriers-A Strategy for Reliable Encapsulation of Organic Electronics
Jens Meyer et al.
ADVANCED MATERIALS (2009)
Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors
Min Ki Ryu et al.
APPLIED PHYSICS LETTERS (2009)
Gate-bias stress in amorphous oxide semiconductors thin-film transistors
M. E. Lopes et al.
APPLIED PHYSICS LETTERS (2009)
The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors
Kwang-Hee Lee et al.
APPLIED PHYSICS LETTERS (2009)
Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate
C. H. Park et al.
APPLIED PHYSICS LETTERS (2009)
Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics
Jeong-Min Lee et al.
APPLIED PHYSICS LETTERS (2009)
Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress
Po-Tsun Liu et al.
APPLIED PHYSICS LETTERS (2009)
Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors
Woo-Seok Cheong et al.
ETRI JOURNAL (2009)
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
Toshio Kamiya et al.
JOURNAL OF DISPLAY TECHNOLOGY (2009)
Encapsulation of Zinc Tin Oxide Based Thin Film Transistors
Patrick Goerrn et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2009)
Passivation of Bottom-Gate IGZO Thin Film Transistors
D. H. Cho et al.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2009)
Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses
In-Tak Cho et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2009)
Permeation barrier properties of thin oxide films on flexible polymer substrates
John Fahlteich et al.
THIN SOLID FILMS (2009)
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
Jae Kyeong Jeong et al.
APPLIED PHYSICS LETTERS (2008)
High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
Jaechul Park et al.
APPLIED PHYSICS LETTERS (2008)
Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
Jin-Seong Park et al.
APPLIED PHYSICS LETTERS (2008)
Gas diffusion barriers on polymers using multilayers fabricated by Al2O3 and rapid SiO2 atomic layer deposition
Arrelaine A. Dameron et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2008)
Evaluation of gas permeation barrier properties using electrical measurements of calcium degradation
Jin Hwan Choi et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2007)
Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
Donghun Kang et al.
APPLIED PHYSICS LETTERS (2007)
Stability of transparent zinc tin oxide transistors under bias stress
P. Goerrn et al.
APPLIED PHYSICS LETTERS (2007)
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
HQ Chiang et al.
APPLIED PHYSICS LETTERS (2005)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
ZnO-based transparent thin-film transistors
RL Hoffman et al.
APPLIED PHYSICS LETTERS (2003)
分享论文
