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注意:仅列出部分参考文献,下载原文获取全部文献信息。Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition
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Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures
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Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy
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Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
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Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source
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Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm
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Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
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Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
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N-Polar InAlN/AlN/GaN MIS-HEMTs
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Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices
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Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy
S. -L. Sahonta et al.
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Indium incorporation dynamics into AIInN ternary alloys for laser structures lattice matched to GaN
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AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance
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High electron mobility in nearly lattice-matched AlInN/AlN/GaN heterostructure field effect transistors
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Observation of vertical honeycomb structure in InAlN/GaN heterostructures due to lateral phase separation
Lin Zhou et al.
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High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures
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Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells
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High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
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