On the limits to Ti incorporation into Si using pulsed laser melting

Fabrication of p-Si(111) layers with Ti levels well above the solid solubility limit was achieved via ion implantation of 15 keV Ti-48(+) at doses of 10(12) to 10(16) cm(-2) followed by pulsed laser melting using a Nd:YAG laser (FWHM=6 ns) operating at 355 nm. All implanted layers were examined using cross-sectional transmission electron microscopy, and only the 10(16) cm(-2) Ti implant dose showed evidence of Ti clustering in a microstructure with a pattern of Ti-rich zones. The liquid phase diffusivity and diffusive velocity of Ti in Si were estimated to be 9 x 10(-4) cm(2)/s and (2 +/- 0.5) x 10(4) m/s, respectively. Using these results the morphological stability limit for planar resolidification of Si:Ti was evaluated, and the results indicate that attaining sufficient concentrations of Ti in Si to reach the nominal Mott transition in morphologically stable plane-front solidification should occur only for velocities so high as to exceed the speed limits for crystalline regrowth in Si(111). (C) 2014 AIP Publishing LLC.