期刊
APPLIED PHYSICS LETTERS
卷 104, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4869230
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资金
- Semiconductor Research Corporation (SRC) [2012-VJ-2247]
- AFOSR [FA9550-10-1-0365]
The onset of localized current conduction during electroforming of TiO2-based resistive switching devices is investigated using a pulsed voltage method. The temperature rise at electroforming onset is found to vary from 25 to 300 degrees C as the pulse amplitude and the width are varied between 3-8 V and 10 ns-100 ms, respectively. The effective activation energy of the forming event is strongly electric field dependent and decreases from 0.7 eV at 3 V to almost zero at 8 V. The functional form of this dependence points toward charge trapping as the mechanism rather than oxygen vacancy motion. (C) 2014 AIP Publishing LLC.
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