期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 16, 期 35, 页码 S3737-S3748出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/16/35/015
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InP quantum dots grown on GaInP by the Stranski-Krastanow technique are less well studied than InAs quantum dots grown on GaAs. We here give a review of the main experimental evidence for the InP dots being charged when grown in between n-type barriers.
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