期刊
APPLIED PHYSICS LETTERS
卷 104, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4873680
关键词
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资金
- U.S. Army Research Lab (ARL) Director's Strategic Initiative (DSI) program on interfaces in stacked 2D atomic layered materials
- Welch Foundation [C-1716]
- NSF [DMR-1327093]
- U.S. Army Research Office MURI [W911NF-11-1-0362]
- U.S. Office of Naval Research MURI [N000014-09-1066]
- Nanoelectronics Research Corporation [S201006]
We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) field-effect transistors (FETs) on Si/SiO2 substrates. MoS2 has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS2 samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS2. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS2 is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS2 devices following an identical fabrication process demonstrate the improvement in field-effect mobility. (C) 2014 AIP Publishing LLC.
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