期刊
APPLIED PHYSICS LETTERS
卷 104, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4867469
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资金
- National Science Foundation [DMR-1207342]
- Office of Naval Research [N000 14-0-1-0489]
- program Understanding Charge Separation and Transfer at Interfaces in Energy Materials (EFRC: CST), an Energy Frontier Research Center
- U.S. Department of Energy Office of Science, Office of Basic Energy Sciences [DESC0001091]
- Judson S. Swearingen Regents Chair in Engineering at the University of Texas at Austin
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1207342] Funding Source: National Science Foundation
Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO3 (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO3 (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225 degrees C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600 degrees C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7-20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7-20nm-thick BTO films are examined and show an effective dielectric constant of similar to 660 for the heterostructure. (C) 2014 AIP Publishing LLC.
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