期刊
APPLIED PHYSICS LETTERS
卷 85, 期 11, 页码 2119-2121出版社
AMER INST PHYSICS
DOI: 10.1063/1.1792377
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We have observed the frequency dependence of the plasma resonant intensity in the terahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beam. Under sufficient density of two-dimensional (2D) conduction electrons (>10(12) cm(-2)) and a moderate modulation index (the ratio of the density of photoexcited electrons to the initial density of the 2D electrons) we clearly observed the plasma-resonant peaks at 1.9 and 5.8 THz corresponding to the fundamental and third-harmonic resonance at room temperature, which is in good agreement with theory. (C) 2004 American Institute of Physics.
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