期刊
APPLIED PHYSICS LETTERS
卷 104, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4863738
关键词
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资金
- National Basic Research Program of China (973 Program) [2014CB339800]
- National Natural Science Foundation of China [51377133, 51107099]
- Ministry of Education of China [20116118110014]
- Projects of International Cooperation of Shaanxi [2012KW-04]
A 3-mm-gapped GaAs photoconductive semiconductor switch is triggered by a 1.6 mu J laser diode. Effects of the rectangular spot's layout and the triggering position on the electric field threshold of nonlinear mode are investigated. As the illuminated position moves from the cathode to the anode, the effective illumination optical energy varies. In that case, when the rectangular spot is perpendicular to two electrodes the electric field threshold increases linearly. And when the rectangular spot is parallel to the electrodes, the electric field threshold exhibits an asymmetric parabola-like curve. (C) 2014 AIP Publishing LLC.
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