期刊
JOURNAL OF APPLIED PHYSICS
卷 96, 期 6, 页码 3286-3295出版社
AMER INST PHYSICS
DOI: 10.1063/1.1769096
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Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1-xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high quality low-leakage Schottky contacts for low noise applications and for recessed gate high electron mobility transistors. In this work, the effect of postetch chemical treatment of the n-type Al0.22Ga0.78N surface on the performance of the Ni/Au based Schottky contact has been investigated. Three different types of chemical treatment: viz, reactive ion etching, reactive ion etching plus dipping in hot aqua regia, and reactive ion etching plus dipping in hot KOH, are studied. Detailed current-voltage studies of three different surface treated diodes and a comparison with as-deposited diodes reveal significant improvement in the diode characteristics. The latter surface treatment yields Ni/Au Schottky diodes with very low reverse leakage currents, breakdown voltages greater than 44 V, and an ideality factor as low as 1.14. (C) 2004 American Institute of Physics.
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