期刊
APPLIED PHYSICS LETTERS
卷 104, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4873396
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资金
- NSF [1249504]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1249504] Funding Source: National Science Foundation
Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy. (C) 2014 AIP Publishing LLC.
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