Filled and empty states of disordered GaN studied by x-ray absorption and emission

X-ray absorption and emission spectroscopies are used to study the effects of short-ranged ordering on the electronic states of disordered GaN. Nanocrystalline samples with crystallites as small as 3 nm exhibit an electronic structure resembling a broadened version of that in crystalline GaN. The electronic structure is even more heavily broadened in amorphous GaN films containing oxygen impurities or excess gallium. The oxygen containing films show an additional peak in the density of states just above the conduction band edge, and a downward shift of the valence band edge. The signature of molecular nitrogen trapped within the films is evident in both the absorption and emission spectra. (C) 2004 American Institute of Physics.