Diamond Schottky diodes with ideality factors close to 1

The stabilization by vacuum annealing of tungsten carbide/p-diamond Schottky barrier diodes (SBDs) has been investigated. The Schottky barrier height (phi(B)) and ideality factor (n), at high temperature, were consistently estimated by employing a vertical SBD structure. An exponential drop of phi(B) in time at 600K and its stabilization at 1.46 eV after 90 min were reported. The lowest n among SBDs examined was close to 1.0 at 600 K. A linear relation between phi(B) and n in a statistical electrical characterization suggests a phi(B) inhomogeneity. (C) 2014 AIP Publishing LLC.