期刊
SURFACE SCIENCE
卷 566, 期 -, 页码 526-531出版社
ELSEVIER
DOI: 10.1016/j.susc.2004.05.105
关键词
soft X-ray photoelectron spectroscopy; hafnium; surface electronic phenomena (work function; surface potential, surface states, etc.)
We presents the results of valence band studies by soft X-ray photoemission spectroscopy on ex situ prepared, ultrathin Hf-oxide layers on 0.7 nm SiO2/Si. We find that the broadening of the O2p band in the case of 0.6 nm HfO2, as compared to SiO2/Si, is due the distribution of the average O-O separation, and probably two different bond angles, Hf-O-Hf in the film, and Hf-O-Si at the interface. We determine the valence band maximum of HfO2 as 3.92 eV below the Fermi level. Valence-band offsets between SiO2 (in 0.7 nm SiO2/Si) and HfO2 (in 0.6 nm HfO2/SiO2/Si) is found to be -1.1 eV. Between HfO2 and Si, the valence- and conduction-band offset are determined as 2.94 and 1.66 eV respectively. (C) 2004 Elsevier B.V. All rights reserved.
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