Continuous and modulated deposition of fluorocarbon films from c-C4F8 plasmas

Continuous and modulated C-C4F8 (perfluorocyclobutane) plasmas were used to deposit thin Teflon-like films. Gas phase and film composition and structure were investigated and the results can be rationalized with the deposition mechanism developed in a previous work for C2F4-modulated plasmas. The effect of modulation on the morphology and the chemistry of the surface were studied.