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注意：仅列出部分参考文献，下载原文获取全部文献信息。Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
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Zachary Lochner et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2013)
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2013)
Stimulated emission in AlGaN/AlGaN quantum wells with different Al content
J. Mickevicius et al.
APPLIED PHYSICS LETTERS (2012)
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramon Collazo et al.
APPLIED PHYSICS LETTERS (2012)
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
J. E. Northrup et al.
APPLIED PHYSICS LETTERS (2012)
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Kazuhito Ban et al.
APPLIED PHYSICS EXPRESS (2011)
Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
Thomas Wunderer et al.
APPLIED PHYSICS EXPRESS (2011)
Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire
V. N. Jmerik et al.
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Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates
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Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
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Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
Harumasa Yoshida et al.
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231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
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III-nitride UV devices
MA Khan et al.
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