相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
Martin Martens et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2014)
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
Wei Guo et al.
JOURNAL OF APPLIED PHYSICS (2014)
Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates
Yuh-Shiuan Liu et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2 (2014)
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate
Zachary Lochner et al.
APPLIED PHYSICS LETTERS (2013)
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
Jinqiao Xie et al.
APPLIED PHYSICS LETTERS (2013)
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
Tsung-Ting Kao et al.
APPLIED PHYSICS LETTERS (2013)
Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate
Zachary Lochner et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2013)
Development of AlGaN-based graded-index-separate-confinement-heterostructure deep UV emitters by molecular beam epitaxy
Haiding Sun et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2013)
Stimulated emission in AlGaN/AlGaN quantum wells with different Al content
J. Mickevicius et al.
APPLIED PHYSICS LETTERS (2012)
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramon Collazo et al.
APPLIED PHYSICS LETTERS (2012)
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
J. E. Northrup et al.
APPLIED PHYSICS LETTERS (2012)
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Kazuhito Ban et al.
APPLIED PHYSICS EXPRESS (2011)
Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
Thomas Wunderer et al.
APPLIED PHYSICS EXPRESS (2011)
Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire
V. N. Jmerik et al.
APPLIED PHYSICS LETTERS (2010)
Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates
Jan-Robert van Look et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2010)
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
A. Rice et al.
JOURNAL OF APPLIED PHYSICS (2010)
Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
Harumasa Yoshida et al.
APPLIED PHYSICS LETTERS (2008)
231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
Hideki Hirayama et al.
APPLIED PHYSICS LETTERS (2007)
III-nitride UV devices
MA Khan et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
T Takano et al.
APPLIED PHYSICS LETTERS (2004)