期刊
APPLIED PHYSICS LETTERS
卷 105, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4887056
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资金
- Asian Office of Aerospace Research and Development (AOARD) through the Air Force office of Scientific Research (AFOSR) [FA2386-11-1-4077]
We investigate the Al2O3/AlGaN/GaN metal-oxide-semiconductor structure pretreated by O-2 anneals, N-2 remote plasma, and forming gas remote plasma prior to atomic layer deposition of Al2O3 using in situ X-ray photoelectron spectroscopy, low energy electron diffraction, and capacitance-voltage measurements. Plasma pretreatments reduce the Ga-oxide/oxynitride formation and the interface state density, while inducing a threshold voltage instability. (C) 2014 AIP Publishing LLC.
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