期刊
APPLIED PHYSICS LETTERS
卷 85, 期 13, 页码 2634-2636出版社
AMER INST PHYSICS
DOI: 10.1063/1.1794860
关键词
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A reactively sputtered ZrN reflector layer on top of the conventional Mo back contact yields enhanced absorber/back contact reflectance in Cu(In,Ga)Se-2 thin film solar cells. Improved long wavelength quantum efficiency is demonstrated with a ZrN reflector at a Cu(In,Ga)Se-2 thickness of 0.5 mum. The optical gain with respect to a standard Mo back contact is initially offset by increased back contact recombination and contact resistance, but these electronic losses can be suppressed by Ga grading of the absorber or by inclusion of a contact layer of MoSe2. This allows for a significantly improved power conversion efficiency of devices with sub-micron Cu(In,Ga)Se-2 thickness. (C) American Institute of Physics.
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