期刊
APPLIED PHYSICS LETTERS
卷 85, 期 13, 页码 2541-2543出版社
AMER INST PHYSICS
DOI: 10.1063/1.1790587
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We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm(2)/V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3x10(5). The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics. (C) American Institute of Physics.
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