4.6 Article

Field-dependent perpendicular magnetic anisotropy in CoFeB thin films

期刊

APPLIED PHYSICS LETTERS
卷 105, 期 15, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4897939

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资金

  1. SRC
  2. Intel [2011-IN-2152]
  3. NSF [DMR-1210850, DMR-1124601, ECCS-1309416]
  4. Center for NanoFerroic Devices (CNFD)
  5. Nanoelectronics Research Initiative (NRI)
  6. DFG/NSF
  7. CAPES Foundation
  8. Ministry of Education of Brazil
  9. Financiamiento Basal para Centros Cientificos y Tecnologicos de Excelencia (Chile) [FB 0807]
  10. Fondo de Innovacion para la Competitividad-MINECON [ICM P10-061-F]
  11. Directorate For Engineering [1309416] Funding Source: National Science Foundation
  12. Division Of Materials Research
  13. Direct For Mathematical & Physical Scien [1210850] Funding Source: National Science Foundation
  14. Div Of Electrical, Commun & Cyber Sys [1309416] Funding Source: National Science Foundation

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We report ferromagnetic resonance measurements of perpendicular magnetic anisotropy in thin films of Ta/Co20Fe60B20/MgO as a function of the Co20Fe60B20 layer thickness. The first and second order anisotropy terms show unexpectedly strong dependence on the external magnetic field applied to the system during the measurements. We propose strong interfacial spin pinning as a possible origin of the field-dependent anisotropy. Our results imply that high-field anisotropy measurements cannot be directly used for quantitative evaluation of zero-field performance parameters of CoFeB-based devices such as spin torque memory. (C) 2014 AIP Publishing LLC.

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