期刊
APPLIED PHYSICS LETTERS
卷 105, 期 1, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.4887007
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资金
- Research Grants Council of the Hong Kong SAR, China [CityU 104911]
- Natural Science Foundation of China [61176007, 51372213, 51302022]
Si ion implantation with a set of ion energies and ion doses was carried out to dope hexagonal boron nitride (hBN) thin films synthesized by radio-frequency magnetron sputtering. Hall effect measurements revealed n-type conduction with a low resistivity of 0.5 Omega cm at room temperature, corresponding to an electron concentration of 2.0 x 10(19) cm(-3) and a mobility of 0.6 cm(2)/V s. Temperature-dependent resistivity measurements in a wide temperature range from 50 to 800 K demonstrated two shallow donor levels in the hBN band gap induced by Si doping, which was in consistence with the theoretical calculation by density function theory. (C) 2014 AIP Publishing LLC.
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