期刊
APPLIED PHYSICS LETTERS
卷 103, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4847635
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资金
- Naval Postgraduate School in part by National Science Foundation [DMR-0804527]
- NPS Energy Academic Group
- Navy Energy Coordination Office
- Department of Energy, Office of Science Graduate Fellowship Program (DOE SCGF)
- Department of Energy Office of Science, Basic Energy Sciences [DE-AC36-08GO28308]
The mobility of electrons in double heterostructures of p-type Ga0.50In0.50P has been determined by measuring minority carrier diffusion length and lifetime. The minority electron mobility increases monotonically from 300 K to 5 K, limited primarily by optical phonon and alloy scattering. Comparison to majority electron mobility over the same temperature range in comparably doped samples shows a significant reduction in ionized impurity scattering at lower temperatures, due to differences in interaction of repulsive versus attractive carriers with ionized dopant sites. These results should be useful in modeling and optimization for multi-junction solar cells and other optoelectronic devices. (C) 2013 AIP Publishing LLC.
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