期刊
APPLIED PHYSICS LETTERS
卷 102, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4811759
关键词
-
资金
- Laboratory Directed Research and Development program at Sandia National Laboratories
- United States Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- NSF [DMR-1207489]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1207489] Funding Source: National Science Foundation
We report on the growth and characterization of high external quantum efficiency (EQE) GaAs/GaInP double heterostructures. By properly treating the GaAs/GaInP interface, we are able to produce structures measuring a record EQE of 99.5% +/- 0.1% in GaAs. This efficiency exceeds the requirement for achieving laser cooling in GaAs. However, net cooling has not yet been realized due to residual below gap background absorption. (C) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
