期刊
APPLIED PHYSICS LETTERS
卷 102, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4794066
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资金
- Academy of Finland
- Multidisciplinary Institute of Digitalization and Energy program (MIDE) of Aalto University
We demonstrate that an extraction enhancement by a factor of 2.8 can be obtained for a GaN quantum well structure using metallic nanostructures, compared to a flat semiconductor. The InGaN/GaN quantum well is inserted into a dielectric waveguide, naturally formed in the structure, and a silver grating is deposited on the surface and covered with a polymer film. The polymer layer greatly improves the extraction compared to a single metallic grating. The comparison of the experiments with simulations gives strong indications on the key role of weakly guided modes in the polymer layer diffracted by the grating. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794066]
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