期刊
NANOTECHNOLOGY
卷 15, 期 10, 页码 S549-S555出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/15/10/009
关键词
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Compact, physics-based, short-channel models of subthreshold swing and threshold voltage are presented for undoped symmetric double-gate (DG) MOSFETs, including quantum-mechanical and fringe-induced-barrier-lowering effects. Scaling limit projections indicate that individual DG MOSFETs with good turn-off behaviour are feasible at 10 nm scale; however, practical exploitation of these devices toward gigascale integrated systems requires development of novel technologies for significant improvement in process control.
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