期刊
APPLIED PHYSICS LETTERS
卷 103, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4816438
关键词
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资金
- National Science Foundation [DMR1244887, DMR 0605734, DMR 10006835]
- EPSRC [EP/G004447/2]
- HPC Materials Chemistry Consortium under EPSRC [EP/F067496/1]
- Ramsay Memorial Trust
- UCL
- Fulbright Foreign Student Fellowship
- Engineering and Physical Sciences Research Council [EP/F067496/1, EP/G004447/2] Funding Source: researchfish
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1410915] Funding Source: National Science Foundation
- EPSRC [EP/G004447/2, EP/F067496/1] Funding Source: UKRI
We examine ZnSnN2, a member of the class of materials contemporarily termed earth-abundant element semiconductors, with an emphasis on evaluating its suitability for photovoltaic applications. It is predicted to crystallize in an orthorhombic lattice with an energy gap of 2 eV. Instead, using molecular beam epitaxy to deposit high-purity, single crystal as well as highly textured polycrystalline thin films, only a monoclinic structure is observed experimentally. Far from being detrimental, we demonstrate that the cation sublattice disorder which inhibits the orthorhombic lattice has a profound effect on the energy gap, obviating the need for alloying to match the solar spectrum. (C) 2013 AIP Publishing LLC.
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