期刊
APPLIED PHYSICS LETTERS
卷 102, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4803926
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资金
- EPSRC [EP/K004220/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K004220/1] Funding Source: researchfish
A significant enhancement in solar hydrogen generation has been achieved using a GaN-based nanorod array structure as a photoelectrode in comparison with a planar one fabricated from the same parent wafer. The nanorod array structure was formed by dry etching using a self-organised nickel nanomask. Under identical illumination conditions in hydrochloric acid solution, the photoelectrode with the nanorod array structure has demonstrated a photocurrent enhancement with a factor of 6 and an enhancement in the rate of hydrogen generation with a factor of 7. The enhancement in solar hydrogen generation is attributed to a massive improvement in light absorption area, reduced travelling distance for the migration of the photogenerated carriers to the semiconductor/electrolyte interface, and surface band bending. (C) 2013 AIP Publishing LLC.
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