期刊
APPLIED PHYSICS LETTERS
卷 103, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4826642
关键词
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资金
- IBS (Institute for Basic Science)
- SRC Centre for Topological Matter through the National Research Foundation (NRF), Republic of Korea [2011-0030787]
- Division of Materials Sciences and Engineering of the U.S. Department of Energy [De-Ac02-05Ch11231]
- MSIP
- POSTECH
- [2012R1A2A1A01009249]
- Ministry of Science, ICT & Future Planning, Republic of Korea [N01130013] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2013-PAL] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report the tuning of electrical properties of single layer graphene by a-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles. (C) 2013 AIP Publishing LLC.
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