期刊
APPLIED PHYSICS LETTERS
卷 102, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4803803
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资金
- National Natural Science Foundation of China [11204110]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [12KJB140005]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
In this letter we propose a universal strategy combining external electric field with the ripple of membrane to tune the bandgap of semiconducting atomic monolayer. By first-principles calculations we show that the bandgap of rippled MoS2 monolayer can be tuned in a large range by vertical external electric field, which is expected to have little effect on MoS2 monolayer. This phenomenon can be explained from charge redistribution under external electric field by a simple model. This may open an avenue of optimizing monolayer MoS2 for electronic and optoelectronic applications by surface patterning. (C) 2013 AIP Publishing LLC.
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