期刊
APPLIED PHYSICS LETTERS
卷 103, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4816505
关键词
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资金
- NSF China [21174016, 60825407]
- RFDP [20120009110031]
- ISTCP China [2008DFA61420]
- 111 project China [B08002]
In this work, a series of poly(p-phenylene benzobisoxazole) (PBO) light emitting devices was fabricated. Doping non-fluorescent copper phthalocyanine into the PBO light emitting layer caused a substantial enhancement in electroluminescence from the PBO matrix. Current-voltage characteristics revealed hole-trapping at low doping levels, and hole-transportation at high doping concentrations. The performance of the device improved substantially, reaching a brightness of 3.4 x 10(4) cd/m(2) and current efficiency of 10.9 cd/A or more. This offers a practical approach to develop a single-layered device structure by simply tuning the trap densities. (C) 2013 AIP Publishing LLC.
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