期刊
APPLIED PHYSICS LETTERS
卷 103, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4813598
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资金
- French agency for research (ANR) [2011 RMNP 018 01]
Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping concentrations. The free hole density and the effective dopant concentration N-A - N-D as a function of magnesium incorporation measured by secondary ion mass spectroscopy clearly reveal both a magnesium doping efficiency up to 90% and a strong dependence of the acceptor ionization energy Ea with the acceptor concentration N-A. These experimental observations highlight an isolated acceptor binding energy of 245 +/- 25 meV compatible, at high acceptor concentration, with the achievement of p-type GaN: Mg layers with a hole concentration at room temperature close to 10(19) cm(-3). (C) 2013 AIP Publishing LLC.
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