期刊
APPLIED PHYSICS LETTERS
卷 102, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4812343
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资金
- Deutsche Forschungsgemeinschaft (DFG) [SFB 787]
We report on the deterministic fabrication of sub-mu m mesa-structures containing single quantum dots (QDs) by in situ electron-beam lithography. The fabrication method is based on a two-step lithography process: After detecting the position and spectral features of single InGaAs QDs by cathodoluminescence (CL) spectroscopy, circular sub-mu m mesa-structures are defined by high-resolution electron-beam lithography and subsequent etching. Micro-photoluminescence spectroscopy demonstrates the high optical quality of the single-QD mesa-structures with emission linewidths below 15 mu eV and g((2))(0) = 0.04. Our lithography method has an alignment precision better than 100 nm which paves the way for a fully deterministic device technology using in situ CL lithography. (C) 2013 AIP Publishing LLC.
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