期刊
APPLIED PHYSICS LETTERS
卷 103, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4830377
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资金
- National Science Foundation [DMR-0907296]
- Department of Energy [DE-FG02-03ER46028]
Mechanically stressed nanomembranes are used to demonstrate mid-infrared interband light emission from Ge within the 2.1-2.5 mu m atmospheric transmission window. Large biaxial tensile strain is introduced in these samples to convert Ge into a (near-) direct-bandgap semiconductor and to red-shift its luminescence. A diffractive array of Ge pillars is used to outcouple the long-wavelength interband radiation, which is otherwise primarily emitted in the sample plane. An order-of-magnitude strain-induced enhancement in radiative efficiency is also reported, together with the observation of luminescence signatures associated with photonic-crystal cavity modes. These results are promising for the development of silicon-compatible lasers for mid-infrared optoelectronics applications. (C) 2013 AIP Publishing LLC.
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