期刊
APPLIED PHYSICS LETTERS
卷 103, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4847675
关键词
-
资金
- Scientific User Facilities Division, Office of Basic Energy Sciences, U. S. Department of Energy
- Office of Naval Research [N00014-11-1-0463]
- W. M. Keck Foundation Science and Engineering Grant
- Materials Research Science and Engineering Center (MRSEC) of Northwestern University [DMR-1121262]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1121262] Funding Source: National Science Foundation
Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al2O3 and HfO2 films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al2O3/ HfO2 stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film. (C) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据