期刊
APPLIED PHYSICS LETTERS
卷 102, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4802486
关键词
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资金
- Ministry of Science and Technology of China [2011CB302002, 2011CB302006, 2009CB929404]
- National Science Foundation [61076007, 11174348, 51272280, 11274366, 61204067]
- Chinese Academy of Sciences
- Beijing Synchrotron Radiation Facility
We have constructed a dual-band ultraviolet photodetector by growing high quality MgxZn1-xO layers on Si substrate with molecular beam epitaxy. The device performance was studied by current-voltage, capacitance-voltage, spectra photoresponse, and time-resolved photoresponse characterizations. It demonstrates a high UV/visible light rejection ratio of more than 2 orders of magnitude and a fast response speed of less than 100 ms. The cutoff wavelength can be at solar-blind (280 nm)/visible-blind (301 nm) region by applying 1 V forward/2 V reverse bias. The working principle of the dual-band photodetector was finally investigated by interpretation of the specific carrier transport behavior with the energy band diagram. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802486]
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