Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Temperature dependent Hall effect measurements from 20 to 300K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed. (C) 2013 AIP Publishing LLC.