期刊
APPLIED PHYSICS LETTERS
卷 103, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4816745
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资金
- Program for Strategic Development of Petrozavodsk State University
- Korean NRF [2010-0029132]
- National Research Foundation of Korea [2010-0029132] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Graphene films demonstrating low sheet resistance and high transparency in the visible light range are promising to be used as electrodes for light-emitting applications. In this work, we report the implementation of single layer graphene as hole injecting electrode for CdSe/ZnS quantum dot-light emitting diodes (QD-LED). We compare graphene vs. indium-tin-oxide (ITO)-based anode junctions by electroluminescence intensity performance of QD-LEDs. Our results demonstrate better hole injection efficiency for the graphene-based electrode at technologically relevant current densities J < 0.4 A/cm(2), therefore, recommending single layer graphene as a valuable alternative to replace ITO in QD-LED technology. (C) 2013 AIP Publishing LLC.
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